50半百60

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50半百60第一篇
《50N60》

HiPerFASTTM IGBT

Surface Mountable

IXGH50N60AVCESIXGH50N60ASIC25

VCE(sat)tfi

TO-247 SMD(50N60AS)

=600 V=75 A=2.7 V=275 ns

SymbolVCESVCGRVGESVGEMIC25IC90ICM

SSOA(RBSOA)PCTJTJMTstg

Test ConditionsTJ= 25°C to 150°C

TJ= 25°C to 150°C; RGE = 1 MΩContinuousTransientTC= 25°CT

C= 90°CTC= 25°C, 1 ms

VGE= 15 V, TVJ = 125°C, RG = 10 ΩClamped inductive load, L = 30 µHTC= 25°C

Maximum Ratings

600600±20±307550200

ICM = 100@ 0.8 VCES

250

-55 ... +150

150

-55 ... +150

300

VVVVAAAAW°C°C°C°C

C (TAB)

(50N60A)

C (TAB)

C = Collector,TAB = Collector

G = Gate,E = Emitter,

Maximum Lead and Tab temperature for soldering1.6 mm (0.062 in.) from case for 10 sMdWeight

Mounting torque, TO-247 AD

TO-247 SMDTO-247 AD

1.13/10Nm/lb.in.

46

gg

Featuresl

International standard packagesJEDEC TO-247 SMD surface

mountable and JEDEC TO-247 ADl

High frequency IGBTl

High current handling capabilityl

2nd generation HDMOSTM processl

MOS Gate turn-on-drive simplicity

Applicationsl

AC motor speed controll

DC servo and robot drivesDC choppersl

Uninterruptible power supplies (UPS)l

Switch-mode and resonant-modepower supplies

l

SymbolTest Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min.typ.max.

6002.5

TJ = 25°CTJ = 125°C

52001±1002.7

VVµAmAnAV

BVCES

VGE(th)ICESIGES

VCE(sat)

ICIC

= 250 µA, VGE = 0 V= 250 µA, VCE = VGE

VCE= 0.8 • VCESVGE= 0 V

VCE= 0 V, VGE = ±20 VIC

= IC90, VGE = 15 V

Advantages

High power densityl

Suitable for surface mountingl

Switching speed for high frequencyapplicationsl

Easy to mount with 1 screw, TO-247(insulated mounting screw hole)

l

© 1996 IXYS All rights reserved

92797H(9/96)

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min.typ.max.

25

354000

VCE = 25 V, VGE = 0 V, f = 1 MHz

430100200

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

3580

Inductive load, TJ = 25°C

IC = IC90, VGE = 15 V, L = 30 µH,VCE = 0.8 VCES, RG = Roff = 2.7 Ω

Remarks: Switching times may increasefor VCE (Clamp) > 0.8 • VCES, higherTJ or increased RG

Inductive load, TJ = 125°CIC = IC90, VGE = 15 V, L = 30 µHVCE = 0.8 VCES, RG = Roff = 2.7 ΩRemarks: Switching times may increasefor VCE (Clamp) > 0.8 • VCES,higher TJ or increased R

G

502102002754.85024032806009.6

40025050100

S

TO-247 AD Outline

gfsCiesCoesCresQgQgeQgctd(on)tritd(off)tfiEofftd(on)triEontd(off)tfiEoffRthJCRthCK

IC= IC90; VCE = 10 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

pFpFpFnCnCnCnsnsnsnsmJnsnsmJnsnsmJ0.50K/W

TO-247 SMD Outline

0.25K/W

Min. Recommended Footprint

(Dimensions in inches and (mm))

1.Gate2.Collector3.Emitter4.Collector

AA1A2bb1CDEeLL1L2L3L4ØPQRS

MillimeterMin.Max.4.835.212.292.541.912.161.141.910.6120.8015.755.454.902.702.100.001.903.555.594.326.15

1.402.130.8021.3416.13BSC5.102.902.300.102.103.656.204.83BSC

InchesMin.Max..190.205.090.100.075.085.045.075.024.819.620.215.193.106.083.00.075.140.220.170.242

.055.084.031.840.635BSC.201.114.091.004.083.144.244.190BSC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,5924,850,072

4,881,1064,931,844

5,017,5085,034,796

5,049,9615,063,307

5,187,1175,237,481

5,486,7155,381,025

50半百60第二篇
《43.50.60轨道材料尺寸》

重型

起重型

50半百60第三篇
《APT50GN60BG中文资料》

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.

• • 600V Field Stop

• Trench Gate: Low VEasy Paralleling CE(on) • •

6µs Short Circuit Capability

175°C Rated

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise specified.

SymbolParameter

APT50GN60B(G)

UNITVCESCollector-Emitter Voltage600VGate-Emitter Voltage

±30Volts

GEIC1@ TC = 25°C107IC2Continuous Collector Current @ TC = 110°C64Amps

ICMC = 175°C150SSOASwitching Safe Operating Area @ TJ = 175°C150A @ 600V

PDTotal Power Dissipation

366WattsTJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 175TL

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

300

°C

SymbolCharacteristic / Test Conditions

MIN TYP MAXUnits

V(BR)CESCollector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)600

VGE(TH)Gate Threshold Voltage (VCE = VGE, IC = 800µA, Tj = 25°C)5.0 5.8 6.5 Volts

VCollector-Emitter On Voltage (VCE(ON)

GE = 15V, IC = 50A, Tj = 25°C)1.05 1.45 1.85

Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C) 1.7 ICollector Cut-off Current (VCE = 600V, VGE = 0V, Tj 25CESCollector Cut-off Current (VCE = 600V, VGE = 0V, TµA

j TBDIGESGate-Emitter Leakage Current (VGE = ±20V) 600

nARG(int)

Intergrated Gate Resistor

N/A

Ω

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website -

050-7612 Rev B 7-2005

DYNAMIC CHARACTERISTICS

SymbolCiesCoesresVGEPQgQgeQgcSSOASCSOAd(on)d(off)tfEon1Eon2d(on)trd(off)tfEon1Eon2EoffEofftr

CharacteristicInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate-to-Emitter Plateau VoltageGate-Emitter Charge

Gate-Collector ("Miller") ChargeSwitching Safe Operating AreaShort Circuit Safe Operating AreaTurn-on Delay TimeCurrent Rise TimeTurn-off Delay TimeCurrent Fall Time

Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay TimeCurrent Rise TimeTurn-off Delay Time Current Fall Time

Turn-on Switching Energy (Diode)Turn-off Switching Energy VCC = 400VVGE = 15VIC = 50ATest ConditionsCapacitanceVGE = 0V, VCE = 25V

f = 1 MHzGate ChargeVCE = 300VIC = 50AVGE = 15V

APT50GN60B(G)

MIN

TYP

MAX

UNITpFVnC

3200 125 100 9.0 325 25 175 2025 230 100 1185 1275 1565 20 25 260 140 1205 1850 2125

µJ

nsns

TJ = 175°C, RG = 4.3VGE VCC = 360V, VGE = 15V, TJ = 150°C, RG = 4.3VCC = 400VVGE = 15VIC = 50A

15V, L = 100µH,VCE = 600V150

6

A

µs

Inductive Switching (25°C)RG

= 4.3TJ = +25°C

µJ

TJ = +125°C

RG

= 4.3THERMAL AND MECHANICAL CHARACTERISTICS

SymbolθJCRθJCWT

Characteristic

Junction to Case (IGBT)Junction to Case (DIODE)Package Weight

MIN

TYP

MAX

UNIT°C/Wgm

.41 N/A

5.9

Repetitive Rating: Pulse width limited by maximum junction temperature. For Combi devices, Ices includes both IGBT and FRED leakageson1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)

050-7612 Rev B 7-2005

Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Continuous current limited by package lead temperature.

APT Reserves the right to change, without notice, the specifications and information contained herein.

)

A( TNERRUC ROTCELLOC ,CI V

FIGURE 1, Output Characteristics(TCE, COLLECTER-TO-EMITTER VOLTAGE (V)

J = 25°C)

)A( TNERRUC ROTCELLOC ,CI V

GE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics

)V( EGATLOV RETTIME-OT-ROTCELLOC ,E

CV V GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage

NW1.10

ODKAER)

BD 1.05

REEZITLTAIMMER-OON1.00

T( - REOGTACTELLO0.95

LVOC ,SE CV0.90

B T

J, JUNCTION TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature

)

A( TNERRUC ROTCELLOC ,CI

V, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 2, Output Characteristics (TCEJ = 125°C)

)V( EGATLOV RETTIME-OT-ETAG ,EGV GATE CHARGE (nC)

FIGURE 4, Gate Charge

)V( EGATLOV RETTIME

-OT-ROTCELLOC ,ECVTJ, Junction Temperature (°C)

FIGURE 6, On State Voltage vs Junction Temperature

)A(TNERRUC RO

TCELLOC CD ,CI

TFIGURE 8, DC Collector Current vs Case Temperature

C, CASE TEMPERATURE (°C)

050-7612 Rev B 7-2005

25

)

sn( E20

MIT YAL15

ED NO-

N10

RUT ,)NO5(dt 0

I

CE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9, Turn-On Delay Time vs Collector Current 120100

)sn80( EMIT 60ESIR ,rt4020

I FIGURE 11, Current Rise Time vs Collector Current CE, COLLECTOR TO EMITTER CURRENT (A) 6000

)Jµ5000( SSOL Y4000GRENE3000 NO NR2000UT ,2NO1000

E 0

I

FIGURE 13, Turn-On Energy Loss vs Collector Current CE, COLLECTOR TO EMITTER CURRENT (A)

16000)Jµ( S14000

ESSO12000L YG10000REN8000E GN6000IHCTI4000W S 2000

R G, GATE RESISTANCE (OHMS)

FIGURE 15, Switching Energy Losses vs. Gate Resistance

350

)

sn( 300EMIT Y250ALED200 FFO-150NRUT 100

,)

FFO( d50t0

I

CE, COLLECTOR TO EMITTER CURRENT (A)FIGURE 10, Turn-Off Delay Time vs Collector Current160140120

)sn( 100EMIT 80LLAF 60,ft4020

IFIGURE 12, Current Fall Time vs Collector CurrentCE, COLLECTOR TO EMITTER CURRENT (A)4000

)Jµ( 3500SSOL3000

YGR2500ENE 2000 FFO 1500 NRUT1000 ,FFO500

E0

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 14, Turn Off Energy Loss vs Collector Current6000 )Jµ5000(

SESSOL4000 YGR

E3000NE GN2000IHCTI

W1000

S 0

T, JUNCTION TEMPERATURE (°C)

FIGURE 16, Switching Energy Losses vs Junction Temperature

J050-7612 Rev B 7-2005

IC, COLLECTOR CURRENT (A)

16014012010080604020

APT50GN60B(G)

C, CAPACITANCE (F)

P

VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage

VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area

ZθJC, THERMAL IMPEDANCE

(°C/W)

RECTANGULAR PULSE DURATION (SECONDS)

Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

110FMAX, OPERATING FREQUENCY (kHz)

50

RC MODEL

Junctiontemp. (°Case temperature. (°0.1150.00332

106

FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL

IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current

050-7612 Rev B 7-2005

50半百60第四篇
《IKW50N60T中文资料》

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5µs

• Designed for :

- Frequency Converters - Uninterrupted Power Supply

• Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat)

• Positive temperature coefficient in VCE(sat) • Low EMI

• Low Gate Charge

• Very soft, fast recovery anti-parallel EmCon HE diode

• Complete product spectrum and PSpice Models : Type

VCE

IC

VCE(sat),Tj=25°C

1.5V

Tj,max 175°C

Marking Code

Maximum Ratings

Package Ordering Code

Q67040S4718

Unit Collector-emitter voltage

DC collector current, limited by Tjmax TC = 25°C TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Diode forward current, limited by Tjmax TC = 25°C TC = 100°C

Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

W PtotTj °C Tstg -

260

VGE - IF

VCE

V IC

80 50

ICpuls150 100 50

IFpuls±20

V

tSCµs

1)

A

1)2)

Value limited by bond wire

Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 2.1 Dec-04

Power Semiconductors

Thermal Resistance Characteristic

IGBT thermal resistance, junction – case

Diode thermal resistance, junction – case Thermal resistance, junction – ambient

RthJCD RthJC

Value Unit

TO-247 AC TO-247 AC

0.45 0.8 40

K/W

RthJA

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value

Unit

Static Characteristic

Collector-emitter breakdown voltage Collector-emitter saturation voltage

V(BR)CESVGE=0V, IC=0.2mAVCE(sat)

VGE = 15V, IC=50ATj=25°C Tj=175°C

Diode forward voltage

Gate-emitter threshold voltage Zero gate voltage collector current

VGE(th) ICES VF

VGE=0V, IF=50A Tj=25°C Tj=175°C

IC=0.8mA,VCE=VGEVCE=600V, VGE=0V Tj=25°C Tj=175°C

Gate-emitter leakage current Transconductance Integrated gate resistor

Dynamic Characteristic Input capacitance Output capacitance

Reverse transfer capacitance Gate charge

Internal emitter inductance

measured 5mm (0.197 in.) from case Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤5µs VCC = 400V, Tj ≤ 150°C

A

IGES gfs RGint

VCE=0V,VGE=20V VCE=20V, IC=50A

V - - - - - -

1.5 1.9 1.65 1.6 - -

2 - 2.05 - 40 1000

µA

nA S Ω

CissVCE=25V, pF

VGE=0V, Cossf=1MHz Crss QGate

VCC=480V, IC=50AVGE=15V

LEnH nC

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

2

Rev. 2.1 Dec-04

Power Semiconductors

IKW50N60T TrenchStop Series

Switching Characteristic, Inductive Load, at Tj=25 °C

Value

Unit

IGBT Characteristic Turn-on delay time Rise time

Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy

Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak rate of fall of reverse recovery current during tb

td(on)ns Tj=25°C,

tr VCC=400V,IC=50A,VGE=0/15V,

td(off)RG= 7 Ω, tf Lσ1)=103nH, 1)

Cσ=39pF mJ EonEnergy losses include

Eoff“tail” and diode

reverse recovery. Ets

trrns Tj=25°C,

QrrµC VR=400V, IF=50A, dirr/dt

A/µs

Diode peak reverse recovery current IrrmA diF/dt=1280A/µs

Switching Characteristic, Inductive Load, at Tj=175 °C

Value

Unit

IGBT Characteristic Turn-on delay time Rise time

Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy

Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak rate of fall of reverse recovery current during tb

td(on)ns Tj=175°C,

tr VCC=400V,IC=50A,VGE=0/15V,

td(off)RG= 7 Ω

tf Lσ1)=103nH, 1)

Cσ=39pF mJ EonEnergy losses include

Eoff“tail” and diode

reverse recovery. Ets

trrns Tj=175°C

QrrµC VR=400V, IF=50A, dirr/dt

A/µs

Diode peak reverse recovery current IrrmA diF/dt=1280A/µs

1)

Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

3

Rev. 2.1 Dec-04

Power Semiconductors

100Hz

100A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10A

1A

1kHz

10kHz

100kHz

1V10V

100V1000V

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 7Ω)

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤175°C; VGE=15V)

300W

80A

Ptot, POWER DISSIPATION

250W200W150W100W50W0W25°C

IC, COLLECTOR CURRENT

60A

40A

20A

50°C75°C100°C125°C150°C

0A

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature (Tj ≤ 175°C)

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors

4 Rev. 2.1 Dec-04

120A

100A80A60A40A20A0A

0V

1V

120A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

100A80A60A40A20A0A

2V3V

0V1V

2V3V4V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(Tj = 25°C)

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(Tj = 175°C)

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

2.5V

80A

IC, COLLECTOR CURRENT

2.0V

60A

1.5V

40A

1.0V

20A

0.5V

0A

0.0V

0°C

50°C

100°C

150°C

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

(VCE=10V)

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

saturation voltage as a function of junction temperature (VGE = 15V)

Power Semiconductors

5 Rev. 2.1 Dec-04

50半百60第五篇
《50,60,75钢轨夹板尺寸》

各型号钢轨上夹板的孔距

43Kg的，从左至右，左端至第一个眼的距离是65.0，第一个眼至第二个眼的距离是160.0，

至第三个眼270.0，至第四个眼390.0，至第五个眼500.0，至第六个眼660.0，总长790.

50Kg的，从左至右，左端至第一个眼的距离是50.0，第一个眼至第二个眼的距离是140，

至第三个眼290，至第四个眼430，至第五个眼580.0，至第六个眼720，总长820.

60Kg的，从左至右，左端至第一个眼的距离是50.0，第一个眼至第二个眼的距离是140，

至第三个眼280.0，至第四个眼440.0，至第五个眼580.0，至第六个眼720.0，总长820.

50；60；75钢轨夹板尺寸

75KG钢轨夹板长1000毫米；宽129.4毫米；孔距中间200毫米；两侧为220；220；其次

130；130；边缘为50；50；毫米。

60KG钢轨夹板长820毫米；宽123.82毫米；孔距中间160毫米；两侧为140；140；其次

140；140；边缘为50；50毫米。

50KG钢轨夹板长820毫米；宽104.22毫米；孔距中间140毫米；两侧为150；150；其次

140；140；边缘为50；50毫米。

38及43轨夹板长790毫米；宽94.03毫米；孔距中间120毫米；两侧为110；110；其次160；

160；边缘为65；65毫米

50半百60第六篇
《第一章 50--60年代文学思潮》

50半百60第七篇
《第二章 50-60年代小说》

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